| 摘要 |
This invention provides a manufacturing process for a charge transfer device comprising an N-type well formed in a P-type well on a semiconductor substrate for transferring a signal charge, an N+ region formed on both sides along the charge transfer direction of the N-type well and containing a dopant in a higher concentration than that in the N-type well, a P-type region formed around the N+ region, and a gate electrode covering the N+ region and the N-type well and formed via a gate insulator, comprising ion-implanting an N-type dopant into the region to be the N-type well and the N+ region using the first mask and ion-implanting a P-type dopant into the region to be the N-type well using the second mask. Thus, there can be provided a charge transfer device which has a structure where there is an N+ region on both sides of the N-type well, a large maximum transferable charge and a compact CCD with a width up to 3 times the minimum design dimension.
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