| 发明名称 |
METHOD AND DEVICE FOR MANUFACTURING POLYCRYSTALLINE SEMICONDUCTOR FILM |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a polysilicon film, which can enhance the yield. SOLUTION: Organic matter adhering to one main surface of a glass substrate 3 is removed, by applying N2 O plasma P directed toward the one surface of the glass substrate 3. The organic matter can be removed precisely by growing an amorphous silicon film at the one main surface of the glass substrate 3 from which the organic matter is removed.
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| 申请公布号 |
JP2002280303(A) |
申请公布日期 |
2002.09.27 |
| 申请号 |
JP20010079224 |
申请日期 |
2001.03.19 |
| 申请人 |
TOSHIBA CORP;TOSHIBA ELECTRONIC ENGINEERING CORP |
发明人 |
MIHASHI HIROSHI;NAKAMURA ATSUSHI;HIRATA NORIYUKI;ADACHI NORIYUKI;HIRUTA IKUO;HOKAKU HAJIME;FUKUDA KAICHI;MATSUNAKA SHIGEKI;OMOTO NOBUSHIGE |
| 分类号 |
H01L21/302;H01L21/20;H01L21/205;H01L21/3065;H01L21/336;H01L29/786;(IPC1-7):H01L21/20;H01L21/306 |
主分类号 |
H01L21/302 |
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