| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor thin-film transistor having high performance, by avoiding contamination given from an atmosphere in a time interval ranging after forming process of a substrate protecting layer, via a forming process of a semiconductor layer to a forming process of a gate insulation film. SOLUTION: After forming an insulation layer 2 for protecting the substrate as the substrate protecting layer of the semiconductor thin-film transistor, a semiconductor layer 3 is so laminated thereon as to form further thereon a gate insulation film 4, and in this case, their formations are performed in the state of isolating them from the external atmosphere of a manufacturing apparatus. Further, the gate insulation film 4 and the semiconductor layer 3 are patterned, and then, a third insulation film 6 is formed on a substrate 1 including a laminated structure of the gate insulation film 4 and the semiconductor layer 3 which is obtained resultantly by the patterning. After covering with the third insulation film 6 the exposed portion of the laminated structure of the gate insulation film 4 and the semiconductor layer 3 to the outside, i.e., top and side surfaces of the laminated structure, the film 6 is so etched as to form sidewalls 7 on the side surfaces of the semiconductor layer 3.
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