| 摘要 |
PROBLEM TO BE SOLVED: To improve current amplification factor characteristics by providing a simple step additionally. SOLUTION: In a method for manufacturing a thin film crystal wafer 1 having a pn junction for a heterojunction bipolar transistor by forming an HBT function layer 4 including a buffer layer 3, a collector layer 42, a base layer 43 and emitter layers 44 and 45 on a GaAs substrate 2 by semiconductor epitaxial growth, epitaxial growth is effected while supplying cleaning gas during at least a part of an interval after starting the epitaxial growth of the buffer layer 3 before starting the epitaxial growth of the base layer 43.
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