| 摘要 |
PURPOSE: A gate oxide formation method is provided to improve the reliability of semiconductor devices by restraining a growth of a native oxide. CONSTITUTION: An oxide layer(22) is deposited on a silicon substrate(21). A surface active layer(23) is formed on the entire surface of the oxide layer(22). A gate oxide is formed by alternatively injecting a silicon atom(24) and an oxygen atom on the surface active layer(23). The thickness of the gate oxide depends on according to the deposited thickness of the oxide layer(22). Also, the gate oxide is made of coordinate bond between the silicon and oxygen atoms.
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