| 摘要 |
PURPOSE: A method for manufacturing a thin film transistor is provided to reduce physical stress of a gate oxide layer and resistance of a gate electrode by forming a silicide spacer at both sidewalls of the gate electrode. CONSTITUTION: After sequentially forming a gate oxide layer(2) and a polysilicon layer on a semiconductor substrate(1), a gate electrode(3) is formed by patterning the polysilicon layer. A silicide spacer(4') is formed at both sidewalls of the gate electrode. Lightly doped impurities are implanted into the substrate by using the silicide spacer(4') and the gate electrode(3) as a mask. An oxide spacer(5) is formed at both sidewalls of the silicide spacer. Then, heavily doped impurities are implanted into the substrate.
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