| 摘要 |
PURPOSE: A fabrication method of a capacitor is provided to prevent formation of residues of a seed layer and to easily achieve a sufficient space when forming a lower electrode using an electroplating. CONSTITUTION: A first insulating layer(33) having a contact hole is formed on a semiconductor substrate(31). A plug(35) and barrier films(36,37) are sequentially filled into the contact hole. An adhesive layer(38), a seed layer(39) and a second insulating layer are sequentially formed on the resultant structure. An opening is formed by selectively etching the second insulating layer and the seed layer(39), wherein the upper width of the opening is relatively narrow compared to the lower width of the opening. After forming a third insulating layer on the resultant structure, the second insulating layer is removed to expose the seed layer(39). A lower electrode(42) is formed on the exposed seed layer(39) having a sufficient space by using an electroplating. After removing the third insulating layer, a dielectric film(43) and an upper electrode(44) are sequentially formed on the lower electrode(42).
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