| 摘要 |
PURPOSE: A semiconductor device is provided which facilitates providing a lateral trench-type MOSFET exhibiting a high breakdown voltage of 200 V or higher and preventing the manufacturing steps thereof from greatly increasing. CONSTITUTION: A semiconductor device includes a plurality of unit devices formed in a Si substrate(1), each of the unit devices including a trench, the side face thereof being extended at any angle from 30 degrees of angle to 90 degrees of angle with the substrate surface; an offset drain region surrounding the side face and the bottom face of the trench; an insulator filling the trench; a gate electrode(10) extended onto the trench; a source electrode(12); and a drain electrode(13); the source electrode and the drain electrode being extended above the trench.
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