| 摘要 |
PROBLEM TO BE SOLVED: To freely and finely control plasma density distribution while sufficiently restraining wavelength effect inside an RF antenna in an inductively-coupled plasma processing device.SOLUTION: An annular RF antenna 54 for generating inductively-coupling plasma in a chamber 10 is provided on a ceiling of the chamber 10 or on a dielectric window 52. The RF antenna 54 comprises two coil segments 84(1) and 84(2) spacially formed into an arc-shape of a semi-circle, and electrically and parallely connected to a high frequency power feeding part 62. Furthermore, an annular floating coil 60 with a variable capacitor 58 that can be coupled with the RF antenna 54 by electromagnetic induction is also provided on the dielectric window 52. The variable capacitor 58 can arbitrarily vary in a constant range by a variable capacitance part 82 under control of a main control part 80. |
