| 摘要 |
A high quality wafer comprising AlxGayInzN, wherein 0<y<=1 and x+y+z=1, characterized by a root mean square surface roughness of less than 1 nm in a 10x10 mum2 area at its Ga-side. Such wafer is chemically mechanically polished (CMP) at its Ga-side, using a CMP slurry comprising abrasive particles, such as silica or alumina, and an acid or a base. The process of fabricating such high quality AlxGayInzN wafer may include steps of lapping, mechanical polishing, and reducing internal stress of said wafer by thermal annealing or chemical etching for further enhancement of its surface quality. The CMP process is usefully employed to highlight crystal defects on the Ga-side of the AlxGayInzN wafer.
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