| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has excellent high frequency characteristics, and its manufacturing method. SOLUTION: The contact plug connected to a base lead-out part in a bipolar transistor of a semiconductor device is comprised of one or more slit-section (rectangular-section) metal plugs in parallel to the surface of the semiconductor device, which are extended from tiny contact regions consisting of cobalt silicide layers on a graft base to an element isolation insulating film, and arranged in the vertical direction to the long side of a rectangular section metal plug on an emitter electrode.
|
