| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical-to-surface current type magnetoresistive effect element, a manufacturing method therefor, a reproducing head, and an information storage device on which it is mounted, where a spiral domain is suppressed form occurring on a free magnetic layer by a sensing current, related to a magnetoresistive effect element operating in a CPP mode. SOLUTION: An SV type GMR element 10B, operating in a CPP mode, comprises a laminated ferri-fixed-magnetic layer 14A fitted unidirectionally by a first antiferromagnetic layer 13, and a free magnetic layer 16 which is long-distance exchange-coupled by a second antiferromagnetic layer 18 with a non-magnetic spacer layer 17 in between. The spiral domain is suppressed from occurring by setting a long-distance exchange-coupling bias, due to the second antiferromagnetic layer 18, in the direction reverse to the sense current Is. Setting in the direction of long-distance exchange-coupling bias is performed by a thermal process, while electrifying a current reverse to the sensing current Is.
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