Method of fabricating a non-volatile memory device

摘要

A method of fabricating a non-volatile memory device having a U-shaped floating gate is described. This method forms a device isolation layer in a predetermined region of a semiconductor substrate, thereby defining at least one active region. A floating gate pattern covering active regions and having a gap region exposing the device isolation layer therebetween is formed, and an insulation material pattern where the width of a projection is wider than an upper width of the gap region while the projection covers the gap region and is higher then an upper surface of the floating gate pattern is formed. Subsequently, the floating gate pattern is etched using the insulation material pattern, thereby forming a modified floating gate pattern showing a U-shaped cross section on an active region. As a result, a coupling ratio of the non-volatile memory device can be increased.