发明名称 ELECTRODE STRUCTURE, SEMICONDUCTOR DEVICE, AND THERMOELECTRIC APPARATUS AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method and an apparatus for reducing thermal resistance at the junction section between an electrode and an insulating section, and at the same time, avoiding the peel-off of the electrode. SOLUTION: The manufacturing method includes a process for allowing a conductive substrate 1 to be subjected to oxidation or nitriding treatment for forming an insulating film 2 of an oxide or nitride film on the surface, a process for forming a mask 3 at a region other than an electrode pattern on the substrate surface, a process for implanting metal ions in the front and backside of the substrate, a process for removing the mask, a process for carrying out plating treatment, and a process for connecting a thermoelectric element and a thermal source to the plating surface of the front and backside of the substrate by solder or brazing.
申请公布号 JP2002374010(A) 申请公布日期 2002.12.26
申请号 JP20010181715 申请日期 2001.06.15
申请人 YYL:KK 发明人 YAMAGUCHI SAKUTARO;NAKAMURA KEIJI
分类号 H01L35/34;H01L35/14;H01L35/16;H01L35/18;H01L35/22;H01L35/32;(IPC1-7):H01L35/34 主分类号 H01L35/34
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