| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE: To form a highly reliable contact and measure an inspection mark accurately. CONSTITUTION: An element isolating groove 101a is formed at a marking portion in a substrate 101, and an element isolation insulating film 102 is formed in the element isolation groove 101a. An etching stopper film 110 made of silicon nitride is formed to cover at least a part of the surface of the element isolation insulating film 102 formed at the marking portion. A circuit element is formed at the circuit region in the substrate 101, using the etching stopper film 110 at the marking portion as an inspection mark.
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| 申请公布号 |
KR20030001232(A) |
申请公布日期 |
2003.01.06 |
| 申请号 |
KR20020017645 |
申请日期 |
2002.03.30 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TOMITA KAZUO |
| 分类号 |
G03F7/20;G03F9/00;H01L21/027;H01L21/28;H01L21/60;H01L21/76;H01L21/762;H01L21/8234;H01L27/08;H01L27/088;H01L29/78;(IPC1-7):H01L21/28 |
主分类号 |
G03F7/20 |
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