Semiconductor storage device

摘要

Switching means are provided such that the bit lines between a sense amp and the memory cells connected to the sense amp are put into a non-conducting state during normal operation, and are put into a conducting state during characteristic tests. A control circuit is provided which outputs control signals to control the conducting state of this switching means. The control circuit has a signal generation unit and a control signal switching unit. The signal generation unit generates driving signals and the inverted signals of these driving signals in order to drive the control circuit using applied voltages from outside. The control signal switching unit comprises a plurality of transmission gates, and outputs control signals according to memory cell select signals and the inverted signals of same, based on the combination of conducting and non-conducting states of the transmission gates, which depend on the supply of driving signals and inverted driving signals.