| 摘要 |
PROBLEM TO BE SOLVED: To introduce light efficiently to a photoelectric conversion element layer. SOLUTION: The photoelectric converter comprises an MIS type photoelectric conversion element P comprising an electrode 21, an insulation film 22, a semiconductor layer (a photoelectric conversion layer) 23, an ohmic contact layer or an electrode layer (n<+> ) 24, and a bias line 25 formed sequentially on an insulating substrate 12, a transistor (TFT) comprising a gate electrode 21', an insulation film 22', a semiconductor layer 23', an electrode layer 24', and a source-drain electrode 26 formed sequentially in the same layer structure as the MIS type photoelectric conversion element P, an anti-reflection film 31 of SiN, a moisture resistant protective layer 27 of SiN, a polyimide protective layer 28 for packaging, an adhesive layer 29, and a fluorescent layer 30 of GOS or CsI.
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