发明名称 |
Method of forming capped copper interconnects with reduced hillock formation and improved electromigration resistance |
摘要 |
The electromigration resistance of capped Cu or Cu alloy interconnects is significantly improved by sequentially and contiguously treating the exposed planarized surface of in-laid Cu with a plasma containing NH3 and N2, ramping up the introduction of SiH4 and then initiating deposition of a silicon nitride capping layer. Embodiments include treating the exposed surface of in-laid Cu with a soft NH3 plasma diluted with N2, ramping up the introduction of SiH4 in two stages, and then initiating plasma enhanced chemical vapor deposition of a silicon nitride capping layer, while maintaining substantially the same pressure, N2 flow rate and NH3 flow rate during plasma treatment, SiH4 ramp up and silicon nitride deposition. Embodiments also include Cu dual damascene structures formed in dielectric material having a dielectric constant (k) less than about 3.9.
|
申请公布号 |
US6506677(B1) |
申请公布日期 |
2003.01.14 |
申请号 |
US20010846186 |
申请日期 |
2001.05.02 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
AVANZINO STEVEN C.;NGO MINH VAN;MARATHE AMIT P.;RUELKE HARTMUT |
分类号 |
H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|