发明名称 HIGH-POWER SEMICONDUCTOR LASER DIODE
摘要 PROBLEM TO BE SOLVED: To minimize or avoid the deterioration of the (front) end section of a laser diode, and to improve the long-term stability of the diode as compared to prior art designs. SOLUTION: This laser diode is constituted as a ridge waveguide laser diode containing a semiconductor body, an active region containing a ridge (4), front and back facets respectively provided with mirrors (10 and 12), and a metallized layer (6) formed on the main body and ridge (4) for injecting carriers into the active region. This laser diode is provided with means (11 and 13), which limit the carrier injection and are formed, by providing unpumped portions in the vicinities of the front facet and/or back facet.
申请公布号 JP2003017805(A) 申请公布日期 2003.01.17
申请号 JP20020134066 申请日期 2002.05.09
申请人 NORTEL NETWORKS OPTICAL COMPONENTS (SWITZERLAND) GMBH 发明人 SCHMIDT BERTHOLD;PAWLIK SUSANNE;THIES ACHIM;HARDER CHRISTOPH
分类号 H01S5/16;H01S5/042;H01S5/22;H01S5/323;H01S5/343;(IPC1-7):H01S5/16 主分类号 H01S5/16
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