| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of realizing high speed operability and low power consumption by reducing leak currents due to a parasitic transistor, even when there is any difference in level part between an element isolating area and an element forming area. SOLUTION: This semiconductor device is provided with a channel area 34, and a source diffusion area 39 and a drain diffusion area 40 formed at the both sides of the channel area 34. The channel width of the channel area 34 of this semiconductor device is reduced like a taper from the both sides of the source diffusion area 39 and the drain diffusion area 40 to a channel lengthwise direction B, and both side edges 29 and 29 of the channel widthwise direction are respectively shaped like a 'projecting' dog leg so as to be faced to each other, and vertexes 29a and 29a of the dog leg shapes making the channel width the shortest are rounded.
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