| 摘要 |
In a multi-level flash memory including a plurality of flash memory cells having 2n+m levels represented by upper n bits and lower m bits, a device for programming or reading the flash memory, comprising: an upper bit reference cell block for supplying reference cell currents to construct n upper bits in (n+m) bits for representing multi-levels of a selected memory cell, a lower bit reference cell block supplying reference currents for constructing m lower bits in the (n+m) bits for representing multi-levels of the selected memory cel, and a memory cell program/read unit for reading or programming levels of the selected memory cell by comparing a first voltage of the selected memory cell to the reference currents.
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