METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent characteristic unevenness of a transistor for controlling a circuit from occurring by preventing characteristics or reliability of a memory transistor from being deteriorated and facilitating a microminiaturization. SOLUTION: A method for manufacturing a nonvolatile semiconductor storage device comprises a step of forming a gate of the memory transistor on a first active region 4 of a P-type silicon substrate 1. The method further comprises the steps of depositing an antireflection film 17 made of a silicon nitride film on an overall surface of the substrate 1 by a vapor phase growing method, and coating an upper surface of the gate of the transistor, on both side faces and a polycrystal silicon film 10 on a second active region 5. The method also comprises the steps of then etching the film 10 on the region 5 with a resist 13 as a mask in a state in which the upper surface and both side faces of the gate of the transistor are covered with the film 17, forming a gate electrode 10b of the transistor for controlling the circuit, and then sequentially forming a low concentration source/drain region 14, a sidewall oxide film 15 and high concentration source/drain region 16.