发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device, capable of decreasing a difference in temperature between the best device and the worst device to enable normal electric characteristic test, uniting a plurality of heat sinks into one body to be attached and detached to and from a burn-in device, and realizing the device configuration to reduce the remodeling cost and not to impair flexibility of the device. SOLUTION: This manufacturing method is applied to a burn-in sorting process for a semiconductor device such as a synchronous SRAM, and a plurality of burn-in boards 11 and a plurality of radiator units 12 are alternately and vertically arranged removably in the respective stages of the burn-in device. Each heat sink 31 of the radiator unit 12 is normally in the open state where a tandem fin 41 is separated from the semiconductor device 23, and put in the state where the tandem fin 41 comes into contact with the semiconductor device 23 with designated pressing force by moving a base 32 with the sliding mechanism. In such a contact state, electric characteristic test is carried out.
申请公布号 JP2003084030(A) 申请公布日期 2003.03.19
申请号 JP20010278994 申请日期 2001.09.14
申请人 HITACHI LTD 发明人 MORIKAWA YUKIHIRO;MAKIHIRA NAOHIRO;SATO KOJI
分类号 G01R31/26;H01L21/66;H01L23/40;(IPC1-7):G01R31/26 主分类号 G01R31/26
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