| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve roughness and to reduce recess and chemical attack of plug's surface by adding an ionized oxidizing agent to a polishing agent. CONSTITUTION: After forming an insulating layer(12) on a semiconductor substrate(10), a contact hole is formed by selectively etching the insulating layer(12). After forming a barrier layer(14a) on the insulating layer(12) including the contact hole, a plug formation layer is formed on the resultant structure so as to fill the contact hole. A plug(16a) is then formed by CMP(Chemical Mechanical Polishing) for the plug formation layer using a polishing agent added in an ionized oxidizing agent, such as Fe(NO3)3 and Fe(CN)6.
|
