| 摘要 |
PROBLEM TO BE SOLVED: To prevent a decrease in junctional strength of a ceramic substrate by preventing an increase in resistance value and a break of a resistance heating element and the like even when a ceramic heater and the like are used at high temperatures in a semiconductor manufacturing device. SOLUTION: The semiconductor treatment device includes a substrate made of aluminum nitride or dense ceramic of silicon nitride and including an inner closed space, a metallic bulk material provided in the closed space, and a terminal connected electrically with the bulk material. The substrate is made of a solid phase jointing body. There is a layer with abundant atoms of auxiliary joining agent along the junctional interface of the solid phase jointing body, and ceramic particles are grown in grains to both sides of the junctional interface. The junctional interface has air-tightness, the ceramic particles are made of aluminum nitride or silicon nitride, and the auxiliary joining agent is one or more kinds of joining agents selected from groups made of yttrium compounds or ytterbium compounds and used in a circumstance with a halogen- based caustic gas.
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