发明名称 Semiconductor integrated circuit device and a method of manufacturing the same
摘要 A semiconductor integrated circuit device and a method of manufacturing the same. The surface of a substrate of an active region surrounded by an element isolation trench is horizontally flat in the center portion of the active region but falls toward the side wall of the element isolation trench in the shoulder portion of the active region. This inclined surface contains two inclined surfaces having different inclination angles. The first inclined surface near the center portion of the active region is relatively steep and the second inclined surface near the side wall of the element isolation trench is gentler than the first inclined surface. The surface of the substrate in the shoulder portion of the active region is wholly rounded and has no angular portion.
申请公布号 US6544839(B1) 申请公布日期 2003.04.08
申请号 US19990473297 申请日期 1999.12.28
申请人 HITACHI, LTD. 发明人 KANAMITSU KENJI;WATANABE KOUZOU;SUZUKI NORIO;ISHITSUKA NORIO
分类号 H01L27/06;H01L21/28;H01L21/331;H01L21/336;H01L21/76;H01L21/762;H01L21/8222;H01L21/8234;H01L21/8238;H01L21/8242;H01L27/08;H01L27/108;H01L29/49;H01L29/78;(IPC1-7):H01L21/824;H01L21/823 主分类号 H01L27/06
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