发明名称 |
Method and apparatus for depositing semiconductor film and method for fabricating semiconductor device |
摘要 |
A method for depositing a semiconductor film on a wafer by making a source gas supplied flow almost horizontally to the surface of the wafer. When a process condition, e.g., the flow velocity or pressure of the source gas, should be changed, the source gas has its velocity and/or pressure changed so that the source gas is supplied at a substantially constant flow rate.
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申请公布号 |
US6544869(B1) |
申请公布日期 |
2003.04.08 |
申请号 |
US20010884133 |
申请日期 |
2001.06.20 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HARAFUJI KENJI;ISHIBASHI AKIHIKO;BAN YUZABURO;OHNAKA KIYOSHI |
分类号 |
C23C16/44;C23C16/455;C23C16/52;C30B25/14;(IPC1-7):H01L21/20 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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