| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that in order to realize a mesa diode having good reverse recovery characteristics, an n-type high concentration impurity layer having a narrow width is heretofore formed between p-n junction, but since the n-type high concentration impurity layer is brought into contact with a mesa section, a high field concentration occurs in its near region and a breakdown voltage is resultantly deteriorated. SOLUTION: An n-type high concentration impurity layer (n-type layer) 4 having a narrow width and formed between the p-n junction is selectively formed so as not to be brought into contact with the mesa sectional part. Accordingly, the occurrence of the field concentration near the mesa section can be suppressed, and hence the breakdown voltage deterioration can be suppressed.
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