| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface acoustic wave resonant device in which steepness of passing characteristic on the low-band side is improved. SOLUTION: The other ends of one-terminal surface acoustic wave resonators 11-13 are commonly connected to a thin film electrode line 17, and the thin film electrode line 17 is connected to ground terminals 24-27 by using conducting wires (comprising inductance component) 20-23. The ground terminals 24-27 are not connected electrically to each other. By connecting the thin film electrode line 17 to the ground terminals 24-27 by using a plurality of conducting wires 20-23, inductance component of the conducting wire between the thin film electrode line 17 and the ground is made small, and resonant frequency of the one-terminal surface acoustic wave resonators 11-13 of parallel arms is made high, so that steepness of passing characteristic in low frequency region is improved.
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