| 摘要 |
PURPOSE: An image sensor and a method for manufacturing the same are provided to be capable of restraining reset noise due to the potential variation of a sensing region when a reset transistor is off. CONSTITUTION: A field oxide layer(41) is formed on a substrate(40) to define an active region of a reset transistor. A gate insulating layer(43) is formed on the substrate of the active region. A gate(44) is formed on the gate insulating layer(43). A spacer(45) is formed at both sidewalls of the gate. A drain(46) as a sensing region(SR) and a source(47) as a power voltage(VDD) are formed in the substrate. A channel region(48) is formed at lower portion of the gate. An impurity region(42) is formed in the substrate to partially overlap the channel region(48) while surrounding the sensing region(SR).
|
