| 摘要 |
Carbon-doped silicon oxide films (SiCxOy) produced by CVD of an organosilane gas containing at least one silicon carbon bond, are rapidly densified by exposure to ultraviolet radiation. UV radiation exposure disrupts undesirable chemical bonds (such as Si-OH) present in the carbon-doped silicon oxide following deposition, replacing these bonds with more desirable chemical bonds characteristic of an ordered silicon oxide lattice. As a result of radiation exposure and the chemical bond replacement, gases such as water vapor are evolved and removed, producing a densified and stable carbon-doped silicon oxide film. Densification utilizing ultraviolet radiation is particularly useful because softness and fragility of freshly-deposited (SiCxOy) films may preclude insertion and removal of coated substrates from conventional batch loaded thermal annealing chambers.
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