发明名称 |
Nonvolatile memory, semiconductor device and method of programming to nonvolatile memory |
摘要 |
Disclosed is a nonvolatile memory with a shortened total write time, capable of stably writing data by making a write current constant while reducing fluctuations in a voltage generated by a booster circuit. In a nonvolatile memory such as a flash memory, data is determined at the time of writing operation. While skipping a bit corresponding to write data having the logic "1" (or logic "0"), writing operation to bits corresponding to write data having the logic "0" (or logic "1) is successively performed.
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申请公布号 |
US6567313(B2) |
申请公布日期 |
2003.05.20 |
申请号 |
US20010964394 |
申请日期 |
2001.09.28 |
申请人 |
HITACHI, LTD.;HITACHI ULSI SYSTEMS CO., LTD. |
发明人 |
TANAKA TOSHIHIRO;SHINAGAWA YUTAKA;SUZUKAWA KAZUFUMI;FUJITO MASAMICHI;YAMAKI TAKASHI;MAKUTA KIICHI;WADA MASASHI;KAWAJIRI YOSHIKI |
分类号 |
G11C16/02;G11C8/02;G11C16/12;(IPC1-7):G11C7/00 |
主分类号 |
G11C16/02 |
代理机构 |
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地址 |
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