| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a thin film by chemical vapor deposition, which prevents erosion of a substrate, reduces a leakage current, and improves flatness of the film surface. SOLUTION: In a process for forming the thin film on a substrate of a semiconductor device having a step part by the chemical vapor deposition method, the thin-film forming method by the chemical vapor deposition is characterized by introducing alternately a raw gas and a reactive gas onto the above substrate of the semiconductor device, and conducting the chemical vapor deposition on it, and forming the thin film having the required film thickness on the above substrate of the semiconductor device, through repeating the above chemical vapor deposition. COPYRIGHT: (C)2003,JPO
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