发明名称 |
Method of forming silicon oxide layer and method of manufacturing thin film transistor thereby |
摘要 |
The present method of forming a silicon oxide layer comprises providing two frequency excitation plasma CVD device which comprises a high frequency electrode, a susceptor electrode, and two matching box for impedance matching between the electrodes and a power supply, wherein one side electrode constituting a tuning condenser of a matching box toward the high frequency electrode is the high frequency electrode; placing a substrate on the susceptor electrode; applying high frequency electric power on the high frequency electrode and the susceptor electrode respectively; and forming a silicon oxide layer on the substrate by generating plasma with using a reaction gas of which main reaction gas is a mixing gas of monosilane and nitrous oxide.
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申请公布号 |
US2003109147(A1) |
申请公布日期 |
2003.06.12 |
申请号 |
US20020330180 |
申请日期 |
2002.12.30 |
申请人 |
LG. PHILIPS LCD CO., LTD |
发明人 |
KIM KWANG NAM;CHAE GEE-SUNG |
分类号 |
H01L21/31;C23C16/40;C23C16/509;H01J37/32;H01L21/316;H01L21/336;H01L29/786;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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