| 摘要 |
In a semiconductor memory device including memory cells MC with MOS type structure comprising gate electrodes G and source regions S and drain regions D formed in both sides of the gate electrodes G formed on a semiconductor substrate, the source regions S comprise metal silicide layers 121 only in the source contact regions. Even if projected and recessed parts exist in the surface of the source regions S, since the metal silicide layers 121 are not formed on the projected and recessed parts, the metal silicide layers 121 are not disconnected in the projected and recessed parts, and the metal for forming the metal silicide layers 121 does not absorb silicon atom in the source regions S.
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