Radiation detector and medical diagnostic system

摘要

A radiation detector is disclosed, including a plurality of detector elements arranged adjacent to one another in a planar manner. In an embodiment, for the purpose of radiation detection, a semiconductor layer with an upper side and a lower side is present, the semiconductor layer on one of the sides including an electrode embodied so as to extend across a number of detector elements and electrodes subdivided into individual electrodes being arranged on the other side of the semiconductor layer so that by applying voltage between the electrodes of the two sides, an electrical field is generatable and each individual electrode is assigned an effective volume so as to collect charge in the semiconductor layer. In an embodiment, the individual electrodes are alternately connected to at least two different voltage potentials. Furthermore, a medical diagnostic system is disclosed, including at least one such radiation detector.

主权项

1. A radiation detector, comprising:
a plurality of detector elements arranged adjacent to one another in a planar manner, the plurality of detector elements including
a semiconductor layer to detect radiation,at least a first common electrode at a first side of the semiconductor layer, the first common electrode extending across several of the plurality of detector elements,a plurality of individual second electrodes arranged at a second side of the semiconductor layer to generate an electrical field in response to an applied voltage between the first common electrode and the plurality of individual second electrodes, each of the plurality of individual second electrodes being assigned an effective volume to collect charge in the semiconductor layer,wherein the second side of the semiconductor layer is opposite the first side of the semiconductor layer,wherein the plurality of individual second electrodes are alternately connected to at least two different voltage potentials to develop field lines (i) between the first common electrode and the plurality of individual second electrodes, and (ii) in a boundary area between the plurality of individual second electrodes having different electrical potentials,wherein sub-surfaces of the semiconductor layer corresponding to the plurality of individual second electrodes have a same effective pixel size, andwherein the sub-surfaces are at the second side of the semiconductor layer.