Method of forming a semiconductor device structure and such a semiconductor device structure

摘要

The present disclosure provides in one aspect for a semiconductor device structure which may be formed by providing source/drain regions within a semiconductor substrate in alignment with a gate structure formed over the semiconductor substrate, wherein the gate structure has a gate electrode structure, a first sidewall spacer and a second sidewall spacer, the first sidewall spacer covering sidewall surfaces of the gate electrode structure and the sidewall spacer being formed on the first sidewall spacer. Furthermore, forming the semiconductor device structure may include removing the second sidewall spacer so as to expose the first sidewall spacer, forming a third sidewall spacer on a portion of the first sidewall spacer such that the first sidewall spacer is partially exposed, and forming silicide regions in alignment with the third sidewall spacer in the source/drain regions.

主权项

1. A method of forming a semiconductor device structure, comprising:
providing source/drain regions within a semiconductor substrate adjacent a gate structure formed over said semiconductor substrate, said gate structure having a gate electrode structure, a first sidewall spacer and a second sidewall spacer, said first sidewall spacer covering sidewall surfaces of said gate electrode structure and said second sidewall spacer being formed on said first sidewall spacer, wherein said first sidewall spacer has an L-shape with a vertical leg and a horizontal leg; removing said second sidewall spacer so as to expose said first sidewall spacer; forming a third sidewall spacer on a portion of said first sidewall spacer such that said first sidewall spacer is partially exposed and said third sidewall spacer has a surface extending from said vertical leg to said source/drain regions; and forming silicide regions in the presence of said third sidewall spacer in said source/drain regions.