| 发明名称 | Semiconductor device having electrode made of high work function material and method of manufacturing the same | ||
| 摘要 | Provided is a semiconductor device including a metal film which can be formed with lower costs but still mange to have a necessary work function and oxidation resistance. The semiconductor device includes: an insulating film disposed on a substrate; and a metal film disposed on the insulating film to directly contact the insulating film, the metal film including a laminated structure where a first metal film and a second metal film are alternately and repeatedly laminated, wherein the second metal film has a work function different from that of the first metal film and is different from the first metal film in material, and an oxidation resistance of the first metal film is greater than that of the second metal film. | ||
| 申请公布号 | US9472637(B2) | 申请公布日期 | 2016.10.18 |
| 申请号 | US201514629338 | 申请日期 | 2015.02.23 |
| 申请人 | HITACHI KOKUSAI ELECTRIC INC. | 发明人 | Horii Sadayoshi;Ogawa Arito;Itatani Hideharu |
| 分类号 | H01L29/49;H01L21/28;H01L49/02;H01L29/51;H01L23/522;H01L21/768 | 主分类号 | H01L29/49 |
| 代理机构 | Volpe and Koenig, P.C. | 代理人 | Volpe and Koenig, P.C. |
| 主权项 | 1. A semiconductor device comprising: an insulating film disposed on a substrate; and a metal film disposed on the insulating film to directly contact the insulating film, the metal film comprising a laminated structure where a first metal film and a second metal film are alternately and repeatedly laminated, wherein the second metal film has a work function different from that of the first metal film and is different from the first metal film in material, and an oxidation resistance of the first metal film is greater than that of the second metal film, and the second metal film has a work function of 4.8 eV or less. | ||
| 地址 | Tokyo JP | ||