Semiconductor heterostructure and method of fabrication thereof

摘要

A III-V compound semiconductor heterostructure grown on a substrate is described. The heterostructure includes a first semiconductor layer, wherein the first layer semiconductor layer is a compound semiconductor layer with (III) (V), wherein (III) represents one or more group-III elements and (V) represents one or more group-V elements, an intermediate layer on the first semiconductor layer, wherein the intermediate layer is a compound semiconductor layer with (III)x>1(V)2-x, and wherein the intermediate layer has a thickness of 10 monolayers or below, and a second semiconductor layer, wherein the first layer semiconductor layer is a compound semiconductor layer with (III)1(V)1.

主权项

1. III-V compound semiconductor heterostructure grown on a substrate, comprising:
a first semiconductor layer, wherein the first semiconductor layer is a compound semiconductor layer with (III)1(V)1, wherein (III) represents one or more group-Ill elements and (V) represents one or more group-V elements; an intermediate layer on the first semiconductor layer, wherein the intermediate layer is a group-V under-stoichiometric compound semiconductor layer with (III)x>1(V)2-x, wherein x is smaller than 2, and wherein the intermediate layer has a thickness of 10 monolayers or below; and a second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are essentially stoichiometric semiconductor layers, and wherein the intermediate layer comprises at least one of a group-V element that is different from the one or more group-V elements of the first semiconductor layer, or a group-V element that is same as the one or more group-V elements of the first semiconductor layer, in a different concentration from the concentration of the group-(V) element in the first semiconductor layer.