| 主权项 |
1. A III-nitride power semiconductor device comprising:
a III-nitride heterojunction; a substrate supporting said heterojunction, said substrate being selected from the group consisting of silicon, SiC, a III-nitride semiconductor, and sapphire; a gate insulation body over said heterojunction; a barrier body over said gate insulation body, said barrier body being selected from the group consisting of Ta, W, Si, Mo, Cr, Co, Pd, TiSiN, TaN, TaSiN, WN, WSiN, and WBN; a gate body over said barrier body, said gate body and said barrier body forming a gate electrode; first and second electrodes coupled to said heterojunction; a field insulation body disposed between said first electrode and said gate electrode; and a portion of said first electrode overlying said field insulation body. |
