| 发明名称 |
Formation of strained fins in a finFET device |
| 摘要 |
In an aspect of the present invention, a field-effect transistor (FET) structure is formed. The FET structure comprises a plurality of fins formed on a semiconductor substrate, wherein the plurality of fins includes a set of fins that include a base portion that is comprised of relaxed silicon-germanium (SiGe) and an upper portion that is comprised of semiconductor material. In one aspect, a first set of one or more fins that include an upper portion comprised of a first semiconductor material. In another aspect, a second set of one or more fins that include an upper portion comprised of a second semiconductor material. |
| 申请公布号 |
US9472575(B2) |
申请公布日期 |
2016.10.18 |
| 申请号 |
US201514615621 |
申请日期 |
2015.02.06 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Hashemi Pouya;Khakifirooz Ali;Reznicek Alexander |
| 分类号 |
H01L29/66;H01L27/12;H01L21/84;H01L21/02;H01L21/308;H01L21/324;H01L21/306;H01L21/762;H01L21/225;H01L29/165;H01L29/78;H01L29/06 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
Wells Bryan D.;Simek Daniel R. |
| 主权项 |
1. A field-effect transistor (FET) structure comprising:
a plurality of fins formed on a semiconductor substrate; wherein the plurality of fins includes a first fin, the first fin comprising a base portion of the first fin and an upper portion of the first fin, the base portion of the first fin comprising relaxed silicon-germanium (SiGe) and the upper portion of the first fin comprising a first semiconductor material, and wherein (i) both the upper portion of the first fin and the base portion of the first fin have a substantially similar width and (ii) the upper portion of the first fin is of a thickness that is greater than a thickness of the base portion of the first fin. |
| 地址 |
Armonk NY US |
