METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To provide the technology to safely eliminate hydrogen in the exhaust gas to be exhausted from the chemical vapor deposition apparatus in the chemical vapor deposition process of semiconductor wafers using hydrogen. SOLUTION: This method of manufacturing a semiconductor integrated circuit device comprises the steps of forming a gate electrode of MOSFET by patterning a conductive film after deposition of the conductive film including at least a metal film on a gate oxide film in the thickness of 5 nm or less formed on the main surface of a semiconductor substrate, improving a profile of the end of side wall of the gate electrode by supplying the hydrogen gas including the vapor generated from hydrogen and oxygen through the effect of catalyst and in the low concentration which enables control of reproducibility in formation of oxide film and uniformity of thickness of the oxide film to the main surface or the proximity thereof of the semiconductor substrate heated up to the predetermined temperature and then selectively oxidizing the main surface of the semiconductor substrate, and removing hydrogen included in the exhaust gas after the oxidation process through reaction with oxygen using the catalyst. COPYRIGHT: (C)2003,JPO