Wide band gap semiconductor device

摘要

The present invention includes a second source layer formed on a surface layer of a p base layer in the same step as that of forming a n+ source layer to sandwich a field insulating film, a second gate electrode being the same layer as a gate polysilicon and formed at least on the field insulating film, a third gate electrode formed on one of portions of the second source layer to be electrically connected to the second gate electrode, and a second source electrode formed on the other portion of the second source layer.

主权项

1. A wide band gap semiconductor device, comprising:
a vertical wide band gap semiconductor MOSFET including:
a first base layer of a second conductivity type formed on a surface layer of a first conductivity type wide gap band semiconductor layer;a first source layer of a first conductivity type formed on a surface layer of said first base layer;a gate insulating film formed on said first base layer sandwiched between said first source layer and said wide band gap semiconductor layer;a first gate electrode formed on said gate insulating film;an interlayer insulating film formed to cover said first gate electrode,a first source electrode formed to cover said interlayer insulating film, said first base layer, and said first source layer; anda drain electrode formed below said wide band gap semiconductor layer; and a horizontal wide band gap semiconductor MOSFET including:
a second base layer formed on the surface layer of said wide band gap semiconductor layer in the same step as that of forming said first base layer;a field insulating film formed on said second base layer;a second source layer formed on a surface layer of said second base layer in the same step as that of forming said first source layer to sandwich said field insulating film;a second gate electrode being the same layer as said first gate electrode and formed at least directly on said field insulating film;a third gate electrode formed on one of portions of said second source layer to be electrically connected to said second gate electrode; anda second source electrode formed on the other portion of said second source layer.