发明名称 |
Method for separating chips from diamond wafer |
摘要 |
A method for separating chips from a diamond wafer comprising a substrate, a chemically vapor-deposited diamond layer, and microelectronic elements, with the microelectronic elements protected from thermal damage and degradation caused by the thermally decomposed cuttings produced during the processing steps. (1) Front-side grooves 6 are formed on the chemically vapor-deposited diamond layer 2 by laser processing using a laser such as a YAG, CO2, or excimer laser each having a large output so that the grooves 6 can have a depth 1/100 to 1.5 times the thickness of the diamond layer. (2) The thermally decomposed cuttings produced during the laser processing are removed by using a plasma. (3) Back-side grooves 9 are formed on the substrate 1 by dicing such that the back-side grooves 9 are in alignment with the front-side grooves 6. (4) The diamond wafer 4 is divided into individual chips 10 by applying mechanical stresses.
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申请公布号 |
US2003127428(A1) |
申请公布日期 |
2003.07.10 |
申请号 |
US20020129925 |
申请日期 |
2002.05.13 |
申请人 |
FUJII SATOSHI;GOTOU NOBORU;UEMURA TOMOKI;SAKA TOSHIAKI;ITAKURA KATSUHIRO |
发明人 |
FUJII SATOSHI;GOTOU NOBORU;UEMURA TOMOKI;SAKA TOSHIAKI;ITAKURA KATSUHIRO |
分类号 |
H01C17/06;B23K26/40;C03C15/00;C23C16/26;H01L21/301;H01L21/78;(IPC1-7):C23C16/26 |
主分类号 |
H01C17/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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