发明名称 Insulating film forming method and insulating film forming apparatus
摘要 Both of a first insulating film and a second insulating film are formed by a spin coating method. Accordingly, the formation of the first insulating film and the second insulating film can be performed in the same SOD processing system. Moreover, the aforesaid formation of both of the first insulating film and the second insulating film by the spin coating method can provide favorable low dielectric constant properties and good adhesion of the first insulating film and the second insulating film.
申请公布号 US2003134500(A1) 申请公布日期 2003.07.17
申请号 US20030388610 申请日期 2003.03.17
申请人 KOMIYA TAKAYUKI;NAGASHIMA SHINJI;KOJIMA SHIGEYOSHI 发明人 KOMIYA TAKAYUKI;NAGASHIMA SHINJI;KOJIMA SHIGEYOSHI
分类号 H01L21/316;H01L21/00;H01L21/31;H01L21/3105;H01L21/312;H01L21/314;(IPC1-7):H01L21/31;H01L21/476;H01L21/469 主分类号 H01L21/316
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