发明名称 |
Light emitting diode and semiconductor laser |
摘要 |
An ultraviolet-light-emitting semiconductor diode comprising an n-type ZnO layer with luminous characteristics formed on a transparent substrate, and a p-type semiconductor layer selected from the group consisting of SrCu2O2, CuAlO2 and CuGaO2, which is formed on the n-type ZnO layer to provide a p-n junction therebetween. The transparent substrate is preferably a single crystal substrate having atomically flat yttria-stabilized zirconia (YSZ) (III) surface. The n-type ZnO layer is formed on the transparent substrate having a temperature of 200 to 1200° C., and the p-type semiconductor layer selected from the group of SrCu2O2, CuAlO2 and CuGaO2 is formed on the n-type ZnO layer. The n-type ZnO layer may be formed without heating the substrate, and then the surface of the ZnO layer may be irradiated with ultraviolet light to promote crystallization therein.
|
申请公布号 |
US2003132449(A1) |
申请公布日期 |
2003.07.17 |
申请号 |
US20020169767 |
申请日期 |
2002.11.05 |
申请人 |
HOSONO HIDEO;OTA HIROMICHI;ORITA MASAHIRO;KAWAMURA KENICHI;SARUKURA NOBUHIKO;HIRANO MSAHIRO |
发明人 |
HOSONO HIDEO;OTA HIROMICHI;ORITA MASAHIRO;KAWAMURA KENICHI;SARUKURA NOBUHIKO;HIRANO MSAHIRO |
分类号 |
H01L21/363;H01L33/20;H01L33/28;H01L33/42;H01S5/042;H01S5/327;(IPC1-7):H01L33/00 |
主分类号 |
H01L21/363 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|