发明名称 |
Methods of forming field effect transistors |
摘要 |
A method of forming a field effect transistor includes forming a tungsten nitride comprising layer proximate at least one of a semiconductive channel region or a conductive gate layer. The tungsten nitride comprising layer is oxidized under conditions effective to transform at least some of the tungsten nitride to a tungsten oxide comprising gate dielectric layer. A transistor gate is provided operably proximate the gate dielectric layer, and source/drain regions are provided operably proximate the transistor gate.
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申请公布号 |
US6596596(B2) |
申请公布日期 |
2003.07.22 |
申请号 |
US20020217562 |
申请日期 |
2002.08.12 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
YANG HAINING |
分类号 |
H01L21/02;H01L21/28;H01L21/285;H01L21/31;H01L21/314;H01L21/316;H01L21/3205;H01L21/336;H01L21/44;H01L21/469;H01L21/8242;H01L29/49;H01L29/76;H01L31/119;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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