METHOD OF ELIMINATING AND CONTROLLING INTERNAL STRESS OF OXIDE THIN FILM GROWN ON SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method of eliminating and controlling the internal stress of an oxide thin film which is capable of forming a sharp interfacial structure containing no transition layer formed by oxidation of a substrate substance generated between a semiconductor substrate and the oxide thin film when forming the oxide thin film on the semiconductor substrate. SOLUTION: On a substrate which is hydrogen-terminated on the surface of a semiconductor and thereby is inactivated, metal is grown, and thereafter, oxydation is conducted to form the oxide thin film. By this method, the sharp interfacial structure containing no transition layer or the like can be formed. COPYRIGHT: (C)2003,JPO