| 摘要 |
PROBLEM TO BE SOLVED: To provide a removing method for NH<SB>4</SB>Cl stuck and deposited on CVD device exhaust piping in which running costs can be reduced, a device operation rate can be improved and/or device costs can be reduced when implementing the formation of a nitride film (Si<SB>3</SB>N<SB>4</SB>film) by a CVD device. SOLUTION: Inert gases heated and warmth-retained equal to or higher than the sublimation temperature of NH<SB>4</SB>Cl beforehand are introduced into the CVD device exhaust piping stuck and deposited with NH<SB>4</SB>Cl, or a piping temperature is raised and held equal to or higher than the sublimation temperature of NH<SB>4</SB>Cl. Thus, the stuck and deposited NH<SB>4</SB>Cl is heated equal to or higher than the sublimation temperature, dissociated to NH<SB>3</SB>gases and HCl gases and discharged out of piping. Therefore, when removing the NH<SB>4</SB>Cl stuck and deposited on exhaust piping of the DVD device, it is not necessary to remove exhaust piping integrated to the CVD device. Thus, since labor required for removing, cleaning and folding up piping can be saved, running costs can be reduced, and further, since auxiliary piping is not required, device costs can be reduced. COPYRIGHT: (C)2003,JPO
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