| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystal growth method of compound semiconductor layer which is suitable for forming a semiconductor light emitting element having an excellent crystal property by effectively controlling crystal defects. SOLUTION: A plane (111), a plane inclining to the plane (111) within±10°in angles, and a plane which is chemically equivalent to those planes, are formed as selective growth reference planes to a compound semiconductor substrate of a zincblende structure. Moreover, a compound semiconductor layer of a wurtzite structure is formed by the crystal growth method with the selective growth from the selective growth reference plane in order to form a plane (1-101), a plane with inclination to the plane (1-101) within±10°or the plane equivalent in the crystal property to those planes. Accordingly, the flat plane (1-101) having an excellent crystal property can be formed on the substrate. COPYRIGHT: (C)2003,JPO
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